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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Author Details

Dementev, P. A.

Issue Section Title File
Vol 50, No 4 (2016) Surfaces, Interfaces, and Thin Films Induced surface states of the ultrathin Ba/3C-SiC(111) interface
Vol 50, No 10 (2016) Surfaces, Interfaces, and Thin Films The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface
Vol 53, No 5 (2019) XVI International Conference  “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018 Topological Surface States of Dirac Fermions in n-Bi2Te3 –ySey Thermoelectrics
Vol 53, No 7 (2019) Surfaces, Interfaces, and Thin Films Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions
Vol 53, No 13 (2019) Thermoelectrics and Their Applications Topological Surface States of Multicomponent Thermoelectrics Based on Bismuth Telluride
Vol 53, No 14 (2019) Nanostructures Characterization Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
 

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