作者的详细信息
Cherkashin, N.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 2 (2016) | Physics of Semiconductor Devices | Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation | |
| 卷 50, 编号 9 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs | |
| 卷 53, 编号 12 (2019) | Physics of Semiconductor Devices | InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |