| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 1 (2016) |
Physics of Semiconductor Devices |
Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm |
|
| 卷 50, 编号 1 (2016) |
Physics of Semiconductor Devices |
Simulation of the characteristics of InGaAs/InP-based photovoltaic laser-power converters |
|
| 卷 50, 编号 4 (2016) |
Physics of Semiconductor Devices |
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates |
|
| 卷 50, 编号 7 (2016) |
Physics of Semiconductor Devices |
On current spreading in solar cells: a two-parameter tube model |
|
| 卷 51, 编号 1 (2017) |
Physics of Semiconductor Devices |
Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells |
|
| 卷 51, 编号 1 (2017) |
Physics of Semiconductor Devices |
Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD |
|
| 卷 52, 编号 3 (2018) |
Physics of Semiconductor Devices |
Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE |
|
| 卷 52, 编号 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties |
|
| 卷 52, 编号 10 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities |
|
| 卷 52, 编号 10 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters |
|
| 卷 52, 编号 13 (2018) |
Physics of Semiconductor Devices |
AlGaAs/GaAs Photovoltaic Converters of Tritium Radioluminescent-Lamp Radiation |
|
| 卷 53, 编号 8 (2019) |
Physics of Semiconductor Devices |
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters |
|
| 卷 53, 编号 11 (2019) |
Physics of Semiconductor Devices |
Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells |
|
| 卷 53, 编号 12 (2019) |
Physics of Semiconductor Devices |
Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters |
|
| 卷 53, 编号 14 (2019) |
Nanostructure Devices |
Capacitive Characteristics of High-Speed Photovoltaic Converters at Combined Lighting |
|
