Author Details
Scheglov, M. P.
| Issue | Section | Title | File |
| Vol 53, No 6 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy | |
| Vol 53, No 11 (2019) | Surfaces, Interfaces, and Thin Films | Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy |