作者的详细信息
Mizerov, M. N.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 2 (2016) | Physics of Semiconductor Devices | Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation | |
| 卷 52, 编号 14 (2018) | Lasers and Optoelectronic Devices | Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure | |
| 卷 53, 编号 2 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method | |
| 卷 53, 编号 11 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching |