| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 6 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers |
|
| Том 51, № 2 (2017) |
Physics of Semiconductor Devices |
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K |
|
| Том 51, № 9 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs |
|
| Том 51, № 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field |
|
| Том 52, № 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well |
|
| Том 52, № 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW |
|
| Том 53, № 1 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE |
|
| Том 53, № 3 (2019) |
Review |
Discovery of III–V Semiconductors: Physical Properties and Application |
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