Автор туралы ақпарат

Levinshtein, M. E.

Шығарылым	Бөлім	Атауы	Файл
Том 50, № 3 (2016)	Physics of Semiconductor Devices	High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base
Том 50, № 5 (2016)	Physics of Semiconductor Devices	Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers
Том 51, № 2 (2017)	Physics of Semiconductor Devices	Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors
Том 51, № 6 (2017)	Physics of Semiconductor Devices	On the limit of the injection ability of silicon p⁺–n junctions as a result of fundamental physical effects
Том 51, № 8 (2017)	Physics of Semiconductor Devices	Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
Том 51, № 9 (2017)	Physics of Semiconductor Devices	Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode
Том 53, № 10 (2019)	Physics of Semiconductor Devices	Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
Том 53, № 12 (2019)	Electronic Properties of Semiconductors	Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs