| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 1 (2016) |
XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 |
Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer |
|
| 卷 50, 编号 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications |
|
| 卷 50, 编号 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
On the crystal structure and thermoelectric properties of thin Si1–xMnx films |
|
| 卷 51, 编号 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Thermoelectric effects in nanoscale layers of manganese silicide |
|
| 卷 51, 编号 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Features of the selective manganese doping of GaAs structures |
|
| 卷 52, 编号 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions |
|
| 卷 52, 编号 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering |
|
| 卷 53, 编号 1 (2019) |
Physics of Semiconductor Devices |
Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell |
|
| 卷 53, 编号 3 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition |
|
| 卷 53, 编号 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique |
|
| 卷 53, 编号 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers |
|
