| Issue |
Section |
Title |
File |
| Vol 50, No 4 (2016) |
Physics of Semiconductor Devices |
On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiOx:H (0 < x < 2) with time-modulated dc magnetron plasma |
|
| Vol 51, No 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Surface texture of single-crystal silicon oxidized under a thin V2O5 layer |
|
| Vol 52, No 10 (2018) |
Amorphous, Vitreous, and Organic Semiconductors |
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %) |
|
| Vol 53, No 8 (2019) |
Physics of Semiconductor Devices |
Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass |
|
| Vol 53, No 11 (2019) |
Amorphous, Vitreous, and Organic Semiconductors |
Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase (\({{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}\) = 21.5 mol %) |
|
