作者的详细信息
Hellings, G.
| 期 | 栏目 | 标题 | 文件 |
| 卷 52, 编号 10 (2018) | Physics of Semiconductor Devices | Analysis of the Features of Hot-Carrier Degradation in FinFETs | |
| 卷 52, 编号 13 (2018) | Physics of Semiconductor Devices | Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs |