Author Details
Gushchina, E. V.
| Issue | Section | Title | File |
| Vol 52, No 7 (2018) | Physics of Semiconductor Devices | Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System | |
| Vol 52, No 14 (2018) | Graphene | High Quality Graphene Grown by Sublimation on 4H-SiC (0001) |