| Issue |
Section |
Title |
File |
| Vol 50, No 2 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride |
|
| Vol 52, No 7 (2018) |
Spectroscopy, Interaction with Radiation |
Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation |
|
| Vol 52, No 9 (2018) |
Spectroscopy, Interaction with Radiation |
Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate |
|
| Vol 53, No 8 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Diffusion and Interaction of In and As Implanted into SiO2 Films |
|
