作者的详细信息
Solonitsyna, A. P.
| 期 | 栏目 | 标题 | 文件 |
| 卷 52, 编号 5 (2018) | XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization | Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer | |
| 卷 52, 编号 16 (2018) | 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION | Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar+ Ion Beam | |
| 卷 53, 编号 14 (2019) | Nanostructures Characterization | Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface |