作者的详细信息
Saharov, A. V.
| 期 | 栏目 | 标题 | 文件 |
| 卷 50, 编号 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors | |
| 卷 52, 编号 7 (2018) | Physics of Semiconductor Devices | Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System |