| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of hybrid quantum-confined structures with high absorbance |
|
| Volume 52, Nº 10 (2018) |
Physics of Semiconductor Devices |
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates |
|
| Volume 52, Nº 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides |
|
| Volume 52, Nº 14 (2018) |
Lasers and Optoelectronic Devices |
Diode Lasers with Near-Surface Active Region |
|
| Volume 53, Nº 2 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance |
|
| Volume 53, Nº 10 (2019) |
Physics of Semiconductor Devices |
Semiconductor Laser Quasi-Array with Phase-Locked Single-Mode Emitting Channels |
|
| Volume 53, Nº 12 (2019) |
Physics of Semiconductor Devices |
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) |
|
