作者的详细信息
Cherkov, A. G.
| 期 | 栏目 | 标题 | 文件 |
| 卷 51, 编号 9 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films | |
| 卷 51, 编号 10 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure | |
| 卷 52, 编号 13 (2018) | Surfaces, Interfaces, and Thin Films | Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films |