| Шығарылым |
Атауы |
Файл |
| Том 52, № 6 (2018) |
Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate |
(Eng)
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Aleksandrov O., Mokrushina S.
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| Том 52, № 3 (2018) |
Optimal Doping of Diode Current Interrupters |
(Eng)
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|
Kyuregyan A.
|
| Том 52, № 3 (2018) |
Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model |
(Eng)
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Altukhov V., Sankin A., Sigov A., Sysoev D., Yanukyan E., Filippova S.
|
| Том 52, № 3 (2018) |
Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films |
(Eng)
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Smirnov V., Mokrushin A., Denisov N., Dobrovolskii Y.
|
| Том 52, № 3 (2018) |
Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities |
(Eng)
|
|
Manyakhin F.
|
| Том 52, № 3 (2018) |
Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE |
(Eng)
|
|
Khvostikov V., Sorokina S., Potapovich N., Khvostikova O., Timoshina N., Shvarts M.
|
| Том 52, № 3 (2018) |
Influence of Heat Dissipation Conditions on the Characteristics of Concentrator Photoelectric Modules |
(Eng)
|
|
Andreeva A., Davidyuk N., Malevskiy D., Panchak A., Sadchikov N., Chekalin A.
|
| Том 52, № 2 (2018) |
Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC |
(Eng)
|
|
Solovan M., Andrushchak G., Mostovyi A., Kovaliuk T., Brus V., Maryanchuk P.
|
| Том 52, № 2 (2018) |
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures |
(Eng)
|
|
Tyaginov S., Makarov A., Jech M., Vexler M., Franco J., Kaczer B., Grasser T.
|
| Том 52, № 2 (2018) |
Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers |
(Eng)
|
|
Zubov F., Maximov M., Gordeev N., Polubavkina Y., Zhukov A.
|
| Том 52, № 1 (2018) |
Two-Terminal Tandem Solar Cells DSC/c-Si: Optimization of TiO2-based Photoelectrode Parameters |
(Eng)
|
|
Nikolskaia A., Vildanova M., Kozlov S., Shevaleevskiy O.
|
| Том 52, № 1 (2018) |
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells |
(Eng)
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|
Blokhin S., Bobrov M., Blokhin A., Kuzmenkov A., Vasil’ev A., Zadiranov Y., Evropeytsev E., Sakharov A., Ledentsov N., Karachinsky L., Ospennikov A., Maleev N., Ustinov V.
|
| Том 52, № 1 (2018) |
On the Spatial Localization of Free Electrons in 4H-SiC MOSFETS with an n Channel |
(Eng)
|
|
Ivanov P.
|
| Том 51, № 12 (2017) |
Electrical properties and the determination of interface state density from I–V, C–f and G–f measurements in Ir/Ru/n-InGaN Schottky barrier diode |
(Eng)
|
|
Padma R., Rajagopal Reddy V.
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| Том 51, № 12 (2017) |
Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts |
(Eng)
|
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Liaw Y., Liao W., Wang M., Chen C., Li D., Gu H., Zou X.
|
| Том 51, № 12 (2017) |
Single electron transistor: Energy-level broadening effect and thermionic contribution |
(Eng)
|
|
Nasri A., Boubaker A., Khaldi W., Hafsi B., Kalboussi A.
|
| Том 51, № 10 (2017) |
Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation |
(Eng)
|
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Vikulin I., Gorbachev V., Kurmashev S.
|
| Том 51, № 10 (2017) |
Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well |
(Eng)
|
|
Dikareva N., Zvonkov B., Vikhrova O., Nekorkin S., Aleshkin V., Dubinov A.
|
| Том 51, № 9 (2017) |
Derivation of an analytical expression for a physical process from an experimental curve with kinks |
(Eng)
|
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Davydov V., Kharitonov S., Lugina N., Melnik K.
|
| Том 51, № 9 (2017) |
Degradation of micromorphous thin-film silicon (α-Si/μc-Si) solar modules: Evaluation of seasonal efficiency based on the data of monitoring |
(Eng)
|
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Bogdanov D., Gorbatovskii G., Verbitskii V., Bobyl A., Terukov E.
|
| Том 51, № 9 (2017) |
Hopping conductivity and dielectric relaxation in Schottky barriers on GaN |
(Eng)
|
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Bochkareva N., Voronenkov V., Gorbunov R., Virko M., Kogotkov V., Leonidov A., Vorontsov-Velyaminov P., Sheremet I., Shreter Y.
|
| Том 51, № 9 (2017) |
Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode |
(Eng)
|
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Yuferev V., Levinshtein M., Ivanov P., Zhang J., Palmour J.
|
| Том 51, № 9 (2017) |
Electric-field sensor based on a double quantum dot in a microcavity |
(Eng)
|
|
Tsukanov A., Chekmachev V.
|
| Том 51, № 9 (2017) |
High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process |
(Eng)
|
|
Kyuregyan A.
|
| Том 51, № 9 (2017) |
High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency |
(Eng)
|
|
Kyuregyan A.
|
| Нәтижелер 198 - 76/100 |
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