Отправить статью по E-mail Measurement of the Energy Resolution of Silicon X-Ray Detectors Using Absorption Edge Spectra
- Авторы: Osadchii S.M.1, Petukhov A.A.1, Dunin V.B.2
-
Учреждения:
- All-Russia Research Institute of Physicotechnical and Radio Measurements (VNIIFTRI)
- Joint Institute for Nuclear Research (JINR)
- Выпуск: Том 62, № 5 (2019)
- Страницы: 465-469
- Раздел: Ionizing Radiation Measurements
- URL: https://bakhtiniada.ru/0543-1972/article/view/246730
- DOI: https://doi.org/10.1007/s11018-019-01646-6
- ID: 246730
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
A silicon detector with a longitudinal silicon wafer has been developed. x-Ray spectra at the K-absorption edges of Au, Pb, and Bi are used to measure its energy resolution. The results are compared with measurements based on x-rays from a 241Am gamma-ray source. The dependence of the energy resolution of the detector on the noise of a charge-sensitive amplifier and on statistical fluctuations in pair production of carriers in the silicon is calculated.
Ключевые слова
Об авторах
S. Osadchii
All-Russia Research Institute of Physicotechnical and Radio Measurements (VNIIFTRI)
Автор, ответственный за переписку.
Email: osm@vniiftri.ru
Россия, Moscow Region, Mendeleevo
A. Petukhov
All-Russia Research Institute of Physicotechnical and Radio Measurements (VNIIFTRI)
Email: osm@vniiftri.ru
Россия, Moscow Region, Mendeleevo
V. Dunin
Joint Institute for Nuclear Research (JINR)
Email: osm@vniiftri.ru
Россия, Moscow Region, Dubna
Дополнительные файлы
