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Investigation of heterostructures based on hafnium oxide
- Authors: Sharifullina Y.I.1, Gumarova I.I.1,2, Mamin R.F.2, Nedopekin O.V.1
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Affiliations:
- Kazan Federal University
- Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of the Russian Academy of Science
- Issue: Vol 87, No 4 (2023)
- Pages: 580-586
- Section: Articles
- URL: https://bakhtiniada.ru/0367-6765/article/view/135366
- DOI: https://doi.org/10.31857/S0367676522701034
- EDN: https://elibrary.ru/MDCZEP
- ID: 135366
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Abstract
We presented ab initio calculations of bulk structures and thin films of hafnium oxide, and heterostructures based on hafnium oxide in the tetragonal phase and silicon, structural and electronic properties are investigated. The density of states spectra is considered, the results obtained are analyzed, and some of them are compared with previously obtained data (for the studied systems).
About the authors
Y. I. Sharifullina
Kazan Federal University
Author for correspondence.
Email: janesharifullina@yandex.ru
Russia, 420008, Kazan
I. I. Gumarova
Kazan Federal University; Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of the Russian Academy of Science
Email: janesharifullina@yandex.ru
Russia, 420008, Kazan; Russia, 420029, Kazan
R. F. Mamin
Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of the Russian Academy of Science
Email: janesharifullina@yandex.ru
Russia, 420029, Kazan
O. V. Nedopekin
Kazan Federal University
Email: janesharifullina@yandex.ru
Russia, 420008, Kazan
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