Forming Porous Structures on Silicon with a Ferroelectric for Capacitive Microelectronic and Microsystems Engineering Elements

O. V. Semenova; M. Yu. Railko; T. N. Patrusheva; F. F. Merkushev; S. A. Podorozhyak; V. A. Yuzova; A. Ya. Korets; A. I. Khol’kin

doi:10.1134/S0040579518050238

Forming Porous Structures on Silicon with a Ferroelectric for Capacitive Microelectronic and Microsystems Engineering Elements

Авторлар: Semenova O.V.¹, Railko M.Y.¹, Patrusheva T.N.², Merkushev F.F.¹, Podorozhyak S.A.¹, Yuzova V.A.¹, Korets A.Y.¹, Khol’kin A.I.³
Мекемелер:
1. Siberian Federal University
2. Baltic State Technical University Voenmekh
3. Kurnakov Institute of General and Inorganic Chemistry
Шығарылым: Том 52, № 5 (2018)
Беттер: 862-867
Бөлім: Technology of Inorganic Substances and Materials
URL: https://bakhtiniada.ru/0040-5795/article/view/172660
DOI: https://doi.org/10.1134/S0040579518050238
ID: 172660

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The formation of heterostructures based on porous silicon with barium titanate for application in capacitive electronic and microsystem engineering elements has been experimentally investigated. The dependences of the capacitance and permittivity on the porous matrix dimensions, number of deposited barium titanate layers, and material of capacitor structure plates has been analyzed.