Production of porous ceramic materials using nanodisperse SiC powder


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Resumo

Porous ceramic materials were produced by hot pressing of a nanocrystalline (19 nm) silicon carbide powder synthesized by a hybrid method that combined the sol–gel processing of a finely divided and chemically reactive SiO2–C system and the carbothermic synthesis at moderate (1400°C) temperature in a vacuum. It was studied how such characteristics as density, porosity, sizes of crystallites and aggregates of SiC particles, specific surface area, and compressive strength depend on pressing temperature (1400, 1500, 1600, and 1700°C).

Sobre autores

E. Simonenko

Kurnakov Institute of General and Inorganic Chemistry

Autor responsável pela correspondência
Email: ep_simonenko@mail.ru
Rússia, Leninskii pr. 31, Moscow, 119991

A. Derbenev

Kurnakov Institute of General and Inorganic Chemistry

Email: ep_simonenko@mail.ru
Rússia, Leninskii pr. 31, Moscow, 119991

N. Simonenko

Kurnakov Institute of General and Inorganic Chemistry

Email: ep_simonenko@mail.ru
Rússia, Leninskii pr. 31, Moscow, 119991

E. Papynov

Institute of Chemistry, Far-Eastern Branch; Far-Eastern Federal University

Email: ep_simonenko@mail.ru
Rússia, pr. stoletiya Vladivostoka 159, Vladivostok, 690022; ul. Sukhanova 8, Vladivostok, 690950

V. Maiorov

Institute of Chemistry, Far-Eastern Branch

Email: ep_simonenko@mail.ru
Rússia, pr. stoletiya Vladivostoka 159, Vladivostok, 690022

E. Gridasova

Far-Eastern Federal University

Email: ep_simonenko@mail.ru
Rússia, ul. Sukhanova 8, Vladivostok, 690950

V. Avramenko

Institute of Chemistry, Far-Eastern Branch; Far-Eastern Federal University

Email: ep_simonenko@mail.ru
Rússia, pr. stoletiya Vladivostoka 159, Vladivostok, 690022; ul. Sukhanova 8, Vladivostok, 690950

V. Sevastyanov

Kurnakov Institute of General and Inorganic Chemistry

Email: ep_simonenko@mail.ru
Rússia, Leninskii pr. 31, Moscow, 119991

N. Kuznetsov

Kurnakov Institute of General and Inorganic Chemistry

Email: ep_simonenko@mail.ru
Rússia, Leninskii pr. 31, Moscow, 119991

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