Reflection Spectra of Microarrays of Silicon Nanopillars


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The optical-reflection spectra of microarrays of silicon nanopillars are studied in the visible and near-IR regions. The microarrays of silicon nanopillars are formed by electron-beam lithography and reactive ion etching. The reflection spectra of nanopillar arrays with pitches of 400, 600, 800, and 1000 nm are measured. The height of nanopillars in the array is 0.5 μm, and the diameter varies from 150 to 240 nm. It is noted that the spectral features of the reflection are caused by increased absorption of individual nanopillars and interference effects inside the array. A relation between the geometric parameters of nanopillars and the resonance reflection characteristics is determined taking into account the influence of the substrate.

作者简介

L. Basalaeva

Rzhanov Institute of Semiconductor Physics, Siberian Branch

编辑信件的主要联系方式.
Email: basalaeva@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

Yu. Nastaushev

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: basalaeva@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

F. Dultsev

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: basalaeva@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

N. Kryzhanovskaya

St. Petersburg Academic University

Email: basalaeva@isp.nsc.ru
俄罗斯联邦, St. Petersburg, 194021

E. Moiseev

St. Petersburg Academic University

Email: basalaeva@isp.nsc.ru
俄罗斯联邦, St. Petersburg, 194021

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2018