Optical and Photoelectric Properties of GaS Thin Films and GaS/InSe Heterostructure
- Авторы: Guseinov A.G.1, Salmanov V.M.1, Mamedov R.M.1, Salmanova A.A.2, Akhmedova F.M.1
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Учреждения:
- Baku State University
- Azerbaijan State Oil and Industry University
- Выпуск: Том 126, № 5 (2019)
- Страницы: 458-462
- Раздел: Spectroscopy of Condensed States
- URL: https://bakhtiniada.ru/0030-400X/article/view/165978
- DOI: https://doi.org/10.1134/S0030400X19050102
- ID: 165978
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Аннотация
GaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p-GaS/n-InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current–voltage, optical, photoelectric, and luminescence characteristics of p-GaS/n-InSe heterojunctions have been experimentally investigated.
Об авторах
A. Guseinov
Baku State University
Email: vagif_salmanov@yahoo.com
Азербайджан, Baku, AZ1148
V. Salmanov
Baku State University
Автор, ответственный за переписку.
Email: vagif_salmanov@yahoo.com
Азербайджан, Baku, AZ1148
R. Mamedov
Baku State University
Email: vagif_salmanov@yahoo.com
Азербайджан, Baku, AZ1148
A. Salmanova
Azerbaijan State Oil and Industry University
Email: vagif_salmanov@yahoo.com
Азербайджан, Baku, AZ1010
F. Akhmedova
Baku State University
Email: vagif_salmanov@yahoo.com
Азербайджан, Baku, AZ1148
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