Low Temperature Characteristics of Electronic Density of States in Epitaxial Graphene


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Аннотация

We propose a novel approach which considers the positions of defects in graphene structure to describe how electronic density of states and the type of graphene conductivity are affected by electron scattering by certain configurations of foreign atoms in graphene matrix. Despite the fact that there is still insufficient experimental data concerning the effect of short-range order on graphene physical properties, we assume that local disorder can play a decisive role in the low-temperature behavior of graphene’s electronic properties.

Авторлар туралы

N. Bobenko

Institute of Strength Physics and Materials Science of SB RAS; National Research Tomsk Polytechnic University

Хат алмасуға жауапты Автор.
Email: alex@ispms.tsc.ru
Ресей, Tomsk; Tomsk

V. Egorushkin

Institute of Strength Physics and Materials Science of SB RAS

Email: alex@ispms.tsc.ru
Ресей, Tomsk

N. Melnikova

Kuznetsov Siberian Physical Technical Institute of Tomsk State University

Email: alex@ispms.tsc.ru
Ресей, Tomsk

A. Belosludtseva

Institute of Strength Physics and Materials Science of SB RAS; Tomsk State University of Control Systems and Radioelectronics

Email: alex@ispms.tsc.ru
Ресей, Tomsk; Tomsk

L. Barkalov

Tomsk State University of Control Systems and Radioelectronics

Email: alex@ispms.tsc.ru
Ресей, Tomsk

A. Ponomarev

Institute of Strength Physics and Materials Science of SB RAS

Email: alex@ispms.tsc.ru
Ресей, Tomsk

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