Thermal, dielectric, and surface analysis of NaDP doped glycine phosphite single crystals
- Авторлар: Supriya S.1, Fernández-Martinez F.1
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Мекемелер:
- Mechanical Engineering, Chemistry and Industrial Design Department, E.T.S.I.D.I.
- Шығарылым: Том 58, № 8 (2017)
- Беттер: 1668-1671
- Бөлім: Brief Communications
- URL: https://bakhtiniada.ru/0022-4766/article/view/161722
- DOI: https://doi.org/10.1134/S0022476617080261
- ID: 161722
Дәйексөз келтіру
Аннотация
Transparent, unidirectional single crystals of sodium dihydrogen phosphate-doped glycine phosphite (NaDP–GPI) are grown by the Sankaranarayanan-Ramasamy method. The good quality crystal is obtained under controlled thermal conditions. The functional groups and melting temperature of NaDP–GPI single crystals are analysed. The phase transition temperature of NaDP–GPI is calculated from the dielectric studies. The mound-like patterns are observed on the surface of the crystal. The growth process under the controlled thermal condition was observed by optical studies. The obtained results are discussed in detail.
Авторлар туралы
S. Supriya
Mechanical Engineering, Chemistry and Industrial Design Department, E.T.S.I.D.I.
Хат алмасуға жауапты Автор.
Email: sciencepriya@gmail.com
Испания, Madrid
F. Fernández-Martinez
Mechanical Engineering, Chemistry and Industrial Design Department, E.T.S.I.D.I.
Email: sciencepriya@gmail.com
Испания, Madrid
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