Comparing Structural and Electrical Properties of Fluorinated Graphene, Graphene Oxide, and Graphene Films Functionalized with N-Methylpyrrolidone

Abstract

The article presents comparison of structural and electrical properties of fluorinated graphene (FG), graphene oxide (GO), and graphene films functionalized with N-methylpyrrolidone (G-NMP). The obtained functionalized graphene films were continuous, having no ruptures, their thickness was 20–50 nm. Fluorinated films are formed from fluorinated areas and corrugated graphene islets. The size and shape of microstructures on G-NMP surfaces depend on the duration of NMP treatment. GO films demonstrate a rippled surface morphology. The resistance of all films of functionalized graphene exceeds that of pristine graphene films (several kilohms). GO and FG films exhibit dielectric properties. Current-voltage characteristics of FG demonstrate two features: stepwise current increase and negative differential resistance (NDR). Functionalized graphene can be used in flexible electronics, particularly in planar printing technologies.