A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam

L. Hrubčín; Yu. B. Gurov; B. Zaťko; O. M. Ivanov; S. V. Mitrofanov; S. V. Rozov; V. G. Sandukovsky; V. A. Semin; V. A. Skuratov

doi:10.1134/S0020441218060192

A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam

作者: Hrubčín L.¹^,2, Gurov Y.B.¹^,3, Zaťko B.², Ivanov O.M.¹, Mitrofanov S.V.¹, Rozov S.V.¹, Sandukovsky V.G.¹, Semin V.A.¹, Skuratov V.A.¹
隶属关系:
1. Joint Institute for Nuclear Research
2. Institute of Electrical Engineering, Slovak Academy of Sciences
3. National Research Nuclear University, Moscow Engineering Physics Institute
期: 卷 61, 编号 6 (2018)
页面: 769-771
栏目: Nuclear Experimental Technique
URL: https://bakhtiniada.ru/0020-4412/article/view/160439
DOI: https://doi.org/10.1134/S0020441218060192
ID: 160439

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The properties of silicon (Si) and silicon carbide (4Н-SiC) detectors after their exposure to different integral fluxes of xenon (Xe) ions are presented. The detectors were irradiated at the IC-100 cyclotron of the Flerov Laboratory of Nuclear Reactions at the Joint Institute for Nuclear Research. It is shown that the degradation of the spectroscopy characteristics of a SiC detector occurs at higher doses compared to a similar Si detector.