Enviar artigo por via de e-mail A device for heating a substrate during molecular beam epitaxy
- Autores: Shengurov V.G.1,2, Denisov S.A.1,2, Svetlov S.P.1, Chalkov V.Y.1, Shengurov D.V.1,2
-
Afiliações:
- Lobachevskii State University
- Institute of Microstructure Physics
- Edição: Volume 59, Nº 2 (2016)
- Páginas: 317-320
- Seção: Laboratory Techniques
- URL: https://bakhtiniada.ru/0020-4412/article/view/158999
- DOI: https://doi.org/10.1134/S0020441216020135
- ID: 158999
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
A device for uniform heating of both optically opaque silicon and transparent sapphire large-area substrates (with a diameter of up to 100 mm) in vacuum to high temperatures of 1250–1450°C is described. Using the device, it is possible to carefully prepare silicon and sapphire substrates in situ for growing Si and SiGe epitaxial layers by molecular beam epitaxy method.
Sobre autores
V. Shengurov
Lobachevskii State University; Institute of Microstructure Physics
Autor responsável pela correspondência
Email: shengurov@phys.unn.ru
Rússia, pr. Gagarina 23, Nizhny Novgorod, 603950; ul. Akademicheskaya 7, Afonino, Kstovo raion, Nizhny Novgorod oblast, 607680
S. Denisov
Lobachevskii State University; Institute of Microstructure Physics
Email: shengurov@phys.unn.ru
Rússia, pr. Gagarina 23, Nizhny Novgorod, 603950; ul. Akademicheskaya 7, Afonino, Kstovo raion, Nizhny Novgorod oblast, 607680
S. Svetlov
Lobachevskii State University
Email: shengurov@phys.unn.ru
Rússia, pr. Gagarina 23, Nizhny Novgorod, 603950
V. Chalkov
Lobachevskii State University
Email: shengurov@phys.unn.ru
Rússia, pr. Gagarina 23, Nizhny Novgorod, 603950
D. Shengurov
Lobachevskii State University; Institute of Microstructure Physics
Email: shengurov@phys.unn.ru
Rússia, pr. Gagarina 23, Nizhny Novgorod, 603950; ul. Akademicheskaya 7, Afonino, Kstovo raion, Nizhny Novgorod oblast, 607680
Arquivos suplementares
