Electrically Conducting Ceramics Based on Al–AlN–TiB2


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Аннотация

The high-temperature conductivity of ceramics based on Al–AlN–TiB2 obtained by self-propagating high-temperature synthesis has been studied. The dependences of DC resistivity were measured in vacuum (1 Pa) by a four-point technique in a temperature range of 293–1273 K. The evolution of the phase composition of the material upon heating was studied by time-resolved diffraction in real-time mode. The measurements show a “metallic” behavior of conductivity when the Al–AlN–TiB2 composite is heated, and there is also an abrupt change of resistivity in a temperature range of 870–970 K that is linked with Al melting. In this case, the crystalline structure of ceramic phases does not undergo changes in the studied temperature range. The same temperature coefficient of resistance has been observed for all studied compositions up to the melting point of aluminum.

Авторлар туралы

A. Karpov

Merzhanov Institute of Structural Microkinetics and Materials Science

Хат алмасуға жауапты Автор.
Email: karpov_av@ism.ac.ru
Ресей, Chernogolovka, Moscow oblast

D. Kovalev

Merzhanov Institute of Structural Microkinetics and Materials Science

Email: karpov_av@ism.ac.ru
Ресей, Chernogolovka, Moscow oblast

I. Borovinskaya

Merzhanov Institute of Structural Microkinetics and Materials Science

Email: karpov_av@ism.ac.ru
Ресей, Chernogolovka, Moscow oblast

A. Sytschev

Merzhanov Institute of Structural Microkinetics and Materials Science

Email: karpov_av@ism.ac.ru
Ресей, Chernogolovka, Moscow oblast

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