Creation of Silicon Nanostructures in Electric Arc Discharge

Аннотация

The paper presents methods for growing silicon nanotubes using an electric discharge with different values of the electric field strength in the interelectrode gap. It is shown that the shapes of the grown nanomaterials are significantly influenced by both the surrounding gaseous medium and the electric field strength in the interelectrode gap. The silicon nanostructures obtained have been a rather complex and, at the same time, definitely regular configuration and can be widely used in electronics, photovoltaics, batteries, and even as structural elements in composite materials.